Results of research of abrasive treatment influence on process of defects formation in sapphire crystals are presented in article. On the basis of the received results recommendations about determination of properties of sapphire near-surface layers and about improvement of crystal quality are developed. Researches of influence of abrasive treatment on process of defects formation in sapphire crystals allow to choose the optimum modes of process of receiving sapphire monocrystals products.

Keywords: sapphire, abrasive treatment, defect, optimum mode, crack, near-surface layer, grinding, polishing

The author presents the method of calculation of temperature and thermoelastic fields during sapphire crystals growth by horizontal directed crystallization method. Realization of the offered technique allows to carry out the analysis of changes of the temperature and thermoelastic fields in the crystal taking into account spatial and geometrical characteristics of heaters by means of computing experiment. On the basis of the analysis we can carry out redistribution of defects in sapphire, and increasment quality of the grown crystals.

Keywords: sapphire, temperature fields, thermoelastic stresses, horizontal directed crystallization method, technique, computing experiment

The author describes the technological schemes of films formation on sapphire surface for gas-sensitive sensors with use of laser radiation with wavelength of 1064 nm. It is defined that laser radiation allows to increase productivity at gas-sensitive elements reception, to modify crystal and defective structure of materials, to increase quality of oxide film, reproducibility of film parameters and their stability.

Keywords: sapphire, film, gas-sensitive sensor, laser radiation sensitive element, technological scheme, semiconductor materials

The technological scheme of sapphire and glassy dielectric PbO – B2O3 – ZnO juncture formation is suggested. The centrifugation method was used for sapphire and glassy dielectric PbO – B2O3 – ZnO juncture formation. It allows to form uniform films with thickness of units to tens of microns. Researches of the received films surface morphology were made by method of atomic force microscopy.

Keywords: sapphire, glassy dielectric, technological process.