The simulation of the process of the electrically active impurities relocation in the electric field of Schottky diode space charge region has been made. The analysis of the simulation results shows the possibility of controlled alloying impurities relocation on the depth about tens of nanometers caused by electrically active atoms diffusion in the electric field of Schottky diode space charge region.

Keywords: diffusion, space charge region, Schottky diode

Information about authors of issue №4 (2011)

Keywords: authors