A periodic semiconductor structure is considered, consisting of tunnel-uncoupled quantum wires (QW) based on InSb containing impurity centers. The uniform magnetic field is directed along the QW axis. For the case of light polarization transverse with respect to the QW axis in the framework of the dipole approximation, in the effective mass approximation, an analytical expression for the impurity absorption coefficient of light is obtained taking into account the dispersion of the QW radius described by the Gauss function. It is shown that on the spectral curve constructed in the Maple program, for given parameters of the QW and the semiconductor structure, there is a sequence of resonant maxima with a doublet structure. The cyclotron frequency determines the distance between the maxima in the doublet, and the frequency of the doublets on the spectral curve is determined by the hybrid frequency. With an increase in the magnetic field, the dynamics of the edge of the impurity absorption band is observed, which can be used to create detectors of optical radiation in a wide range of wavelengths and will make it possible to identify such semiconductor structures. It is also possible to obtain valuable information about the parameters of the QW and the band structure of the semiconductor from the spectral curve

Keywords: impurity absorption coefficient, quantum wire, low-dimensional semiconductor structures, impurity center

A semiconductor quantum wire (QW) containing an impurity center described in the framework of a hydrogen-like model is considered. The possibility of using InSb QW in photodetectors of infrared optical radiation is discussed. The QW is modeled as a geometrically symmetric cylinder, on the axis of which an impurity center is located at an arbitrary point, with which the origin of the cylindrical coordinate system is associated, in which calculations are performed. It is assumed that the magnetic length is much smaller than the effective Bohr radius - the case of a strong magnetic field. This approximation made it possible to make the impurity potential effectively one-dimensional and obtain analytically accurate calculation results. In the effective mass approximation, in the dipole approximation, an expression is obtained for the matrix elements of the optical transitions of an electron from the impurity ground state to the size-quantized QW states for the case of transverse light polarization and the Kane dispersion law of charge carriers.

Keywords: matrix elements of optical transitions, effective mass method, quantum wire, dipole approximation, size-quantized states

The article discusses the effect of photon drag (EPI) of electrons in a semiconductor quantum wire (QW) with hydrogen-like impurity centers and Kane's dispersion law, located in a longitudinal magnetic field. An analytical expression for the drag current density is obtained in the effective mass approximation, and its spectral dependence is investigated for various values ​​of the magnetic field B and the parameters of the QW upon scattering by a system of potentials of short-range impurities. It was assumed that the QW has the shape of a circular cylinder, on the axis of which hydrogen-like impurity centers are localized. It is shown that, in the one-band approximation, taking into account the nonparabolicity of the dispersion law leads to significant dynamics of the threshold of the spectral curve. The spectral dependence is characterized by a pronounced Zeeman effect. The possibility of using an ESP for the development of photodetectors of optical radiation with a sensitivity controlled in a magnetic field is discussed.

Keywords: electron dragging by photons, quantum wire, hydrogen-like impurity centers, dragging current, dipole approximation