Solid solutions with a mesostructure based on indium arsenide-bismuthide

Abstract

Solid solutions with a mesostructure based on indium arsenide-bismuthide

Blagin A.V., Blaginа L.V., Nefedova N.A.

Incoming article date: 24.06.2020

The paper studies the liquid-phase epitaxy processes of a new material of infrared optoelectronics - indium arsenide doped with bismuth using a stepwise thermal field. An analysis of the phase equilibrium during the growth of a solid solution is carried out. The possibility of the formation of a mesostructure (modulation of the composition along the growth coordinate) is shown. The problems of defect formation in composite layers grown from a melt are considered. Ways of decreasing the dislocations density in gradient layers are discussed. A relatively simple method for controlling the thermal field of temperature in the crystallization zone and a new technological procedure for the sequential crystallization of solid solutions with a mesostructure have been developed.

Keywords: solid solutions, liquid-phase epitaxy, indium arsenide, mesostructure, stepwise thermal field, dislocation generation