Equilibrium distribution of SiGe alloy components in semiconductor film on Si substrate

Abstract

Equilibrium distribution of SiGe alloy components in semiconductor film on Si substrate

Bychkov A.A.

Incoming article date: 08.01.2020

Known mechanisms of relaxation of tension in the film at small misfit deformation: the formation of waviness on the initially flat free surface of the film (the instability of the Asaro-tiller-Grinfeld); nucleation of misfit dislocations at the interface film-substrate; a redistribution of atoms near the wavy surface of the film due to the reduction of elastic energy in napylenie on a substrate a semiconductor film; reducing surface energy of the film by increasing its thickness; formation of nanoscale isolated Islands on the surface of the film (Stransky-Krastanov growth); due to the formation of misfit twinning. This paper presents the results of calculations taking into account these factors for different values of the parameters of the film and Islands.The equilibrium conditions of a two-component elastic layer containing mismatch dislocations are investigated. A nanometer-thick SiGe film on a Si substrate and nanometer-sized SiGe Islands on a wetting layer are considered. The uneven distribution of Ge in the sample volume is taken into account. Three-dimensional models of a flat film with dislocation and Islands are constructed. The calculation of elastic deformations is performed using the finite element method. Approximating formulas and iterative algorithm are used to calculate the Ge distribution in the film. According to the results obtained, the uneven distribution of Ge provides relaxation of elastic energy in the alloy, and Ge atoms are concentrated on the protrusions of the disturbed surface of the film and in the vertices of the Islands. Taking into account the heterogeneity of the Ge distribution in the samples has a significant impact on the growth of islets (stable growth occurs with smaller islets) and undulation on the free surface.

Keywords: thin film, heteroepitaxy, Ge, SiGe, misfit dislocations, elastic energy density, finite element method